Phase transitions and chemical segregation in Ge-rich GST based phase change memory cells.

ABSTRACT: In this work, a detailed chemical and crystallographic analysis of basic logic and a few selected intermediate RESET states of Ge-rich Ge-Sb-Te-based (GST) phase-change memories (PCM) is presented, with a particular focus on the understanding of the microscopic mechanisms underlying their electrical characteristics. We demonstrate that Ge-rich GST-based PCM store the information not only in their crystalline or amorphous phase, as in conventional PCM based on Ge₂Sb₂Te₅, but also in their active material stoichiometries: the amorphous phase is characterized by a Ge-rich composition, guaranteeing automotive-compliant retention, while the crystalline phase shows a composite structure, made of cubic GST and rhombohedral Sb grains, the latter mostly found close

SUBMITTER: Ran S 

PROVIDER: S-EPMC11965493 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature