Ferroelectric HfO₂-ZrO₂ Multilayers with Reduced Wake-Up.

ABSTRACT: Since the discovery of ferroelectricity in HfO₂ thin films, significant research has focused on Zr-doped HfO₂ and solid-solution (Hf,Zr)O₂ thin films. Functional properties can be further tuned via multilayering; however, this approach has not yet been fully explored in HfO₂-ZrO₂ films. This work demonstrates ferroelectricity in a 50 nm-thick, solution-processed HfO₂-ZrO₂ multilayer film, marking it as the thickest multilayer film to date exhibiting ferroelectric properties. The multilayer structure was confirmed through transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy, with high-resolution TEM revealing grain continuity across multiple layers. This finding indicates that a polar pha

SUBMITTER: Mandal B 

PROVIDER: S-EPMC11983163 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature