Impact of Co-Reactants in Atomic Layer Deposition of High-κ Dielectrics on Monolayer Molybdenum Disulfide.

ABSTRACT: The integration of single-layer transition metal dichalcogenides (TMDCs) in nanoscale field-effect transistor devices requires the deposition of a high dielectric constant (high-κ) material to act as the gate dielectric. Traditional thermal atomic layer deposition (ALD) is commonly used to deposit dielectrics on three-dimensional substrates, but ALD of high-κ materials on monolayer TMDCs is more challenging. Thermal ALD with water (H₂O) co-reactant often results in incomplete and nonuniform dielectric growth on atomically thin TMDCs, owing to a chemically inert basal plane. The development of alternative ALD processes for the realization of dielectric layers on monolayer TMDCs is therefore important. Here, we study oxygen (O₂) plasma and ozone (O₃) as co-re

SUBMITTER: Healy BFM 

PROVIDER: S-EPMC11997949 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature