Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena.

ABSTRACT: The basic structure of resistive random access memory (RRAM), with an insulator between two metal electrodes, closely resembles that of a capacitor. However, most studies have focused on resistive switching characteristics, with little attention to the coexistence with capacitive switching. In this study, we analyzed the coexistence of resistance and capacitance memory effects in RRAM devices through measurements and simulations. Using an Al/Al₂O₃/HfO₂/SiO_x/p⁺-Si stack, we confirmed this coexistence experimentally. DC measurements showed bipolar switching characteristics with set operations at positive voltages. Continuous set and reset pulse measurements revealed that the low resistance state (LRS) coincides with a high capacitance st

SUBMITTER: Kim H 

PROVIDER: S-EPMC12000460 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature