Epitaxial Ferroelectric Hexagonal Boron Nitride Grown on Graphene.

ABSTRACT: Ferroelectricity realized in van der Waals (vdW) materials with non-centrosymmetric stacking configurations holds promise for future 2D devices with nonvolatile and reconfigurable functionalities. However, the epitaxial growth of ferroelectric vdW materials often struggles to achieve an energetically unfavorable stacking configuration that enables electric polarization. This challenge is particularly evident when performing heteroepitaxy on another vdW substrate to create versatile and scalable ferroelectric building blocks designed for large-area, atomic-scale thicknesses. Here, epitaxial hexagonal boron nitride (h-BN) multilayer films are successfully grew on single-crystal graphene synthesized on a miscut SiC (0001) substrate. Theoretical calculations illustrate that the moiré-patterned

SUBMITTER: Wong SS 

PROVIDER: S-EPMC12004907 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature