Development of Self-Aligned Top-Gate Transistor Arrays on Wafer-Scale Two-Dimensional Semiconductor.

ABSTRACT: Two-dimensional semiconductor materials (2DSM) effectively mitigate the short-channel effect due to their atomic thickness, offering significant advantages over traditional silicon-based materials, particularly in short channel length. In manufacturing 2DSM top-gate field-effect transistors (TG-FETs), simultaneous miniaturization of the gate and channel can only be achieved through a self-alignment process, enabling high-density integration of short-channel FETs. However, current self-aligned FETs based on 2DSM face challenges in attaining wafer-scale integration due to manufacturing process limitations. This work has successfully developed high-performance and wafer-scale TG-FET arrays using a self-aligned method that integrates the processes of dry etching, wet selective etching, and pos

SUBMITTER: Zhu Y 

PROVIDER: S-EPMC12005750 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature