A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer.

ABSTRACT: We present a quantitative analysis of synaptic characteristics dependent on a read voltage (V_read) of a sub-threshold operating Hf-ZnO synaptic thin-film transistor (Syn-TFT). As an higher case with V_read = 2.3 V near the threshold voltage (V_T), the output current is depressed with applying positive programming-pulses, which is due to a positive V_T shift associated with the electron trapping into the gate insulator. For a lower case with V_read = 0.6 V around the flat-band voltage (V_FB), negative programming-pulses are applied to get de-trapping electrons from the gate insulator, resulting in a facilitation of the output current associated with a negative V_T shift. During the weight-update process, it is observed t

SUBMITTER: Pi J 

PROVIDER: S-EPMC12006370 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature