Quantum Sensitive, Record Dynamic Range Terahertz Tunnel Field-Effect Transistor Detectors Exploiting Multilayer Graphene/hBN/Bilayer Graphene/hBN Heterostructures.

ABSTRACT: Sensitive photodetectors showing large quantum efficiencies and broad dynamic ranges are essential components for on-chip integrated photonic quantum platforms and for probing quantum correlations in metrological sources. However, at terahertz (THz) frequencies, this is a very challenging task owing to the lack of high-absorption materials and thermal effects that impact their noise figure. Here, we develop antenna-coupled tunnel field-effect transistors, based on multilayer graphene/hBN/bilayer graphene/hBN that detect multiwavelength beams at frequencies ∼3 THz with record performances. We reach noise-equivalent powers of ∼10^-12 WHz^-1/2, a power dynamic range exceeding 5 orders of magnitude, limited by the maximum output power (0.8 mW) of the employed source, and a

SUBMITTER: Viti L 

PROVIDER: S-EPMC12007101 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature