Thin Films of Tungsten Disulfide Grown by Sulfurization of Sputtered Metal for Ultra-Low Detection of Nitrogen Dioxide Gas.

ABSTRACT: Tungsten disulfide (WS₂) is attractive for the development of chemiresistive sensors due to its favorable band gap, as well as its mechanical strength and chemical stability. In this work, we elaborate a procedure for the synthesis of thin films consisting of vertically and/or horizontally oriented WS₂ nanoparticles by sulfurizing nanometer-thick tungsten layers deposited on oxidized silicon substrates using magnetron sputtering. According to X-ray photoelectron spectroscopy and Raman scattering data, WS₂ films grown in an H₂-containing atmosphere at 1000 °C are almost free of tungsten oxide. The WS₂ film's thickness is controlled by varying the tungsten sputtering duration from 10 to 90 s. The highest response to nitrogen dioxide (NO<

SUBMITTER: Fedorenko AD 

PROVIDER: S-EPMC12029938 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature