Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection.

ABSTRACT: The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology¹. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories^2-5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds^6-10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanis

SUBMITTER: Xiang Y 

PROVIDER: S-EPMC12043508 | biostudies-literature | 2025 May

REPOSITORIES: biostudies-literature