Intelligent self-correcting growth of uniform Bernal-stacked bi-/trilayer graphene.

ABSTRACT: State-of-the-art synthesis strategies of two-dimensional (2D) materials have been designed following the nucleation-dominant pattern for structure control. However, this classical methodology fails to achieve the precise layer- and stacking-resolved growth of wafer-scale few-layer 2D materials due to its intrinsically low energy resolution. Here, we present an intelligent self-correcting method for the high-resolution growth of uniform few-layer graphene. We demonstrate the layer-resolved growth of wafer-scale bilayer and trilayer graphene (BLG and TLG) with selective Bernal stacking through spontaneous correction of the single-layer graphene film with disordered multilayer graphene islands. Theoretical calculations reveal that the self-correcting growth is driven by the stepwise energy mi

SUBMITTER: Ma W 

PROVIDER: S-EPMC12067222 | biostudies-literature | 2025 May

REPOSITORIES: biostudies-literature