Terahertz field effect in a two-dimensional semiconductor.

ABSTRACT: Layered two-dimensional (2D) materials offer many promising avenues for advancing modern electronics, thanks to their tunable optical, electronic, and magnetic properties. Applying a strong electric field perpendicular to the layers, typically at the MV/cm level, is a highly effective way to control these properties. However, conventional methods to induce such fields employ electric circuit - based gating techniques, which are restricted to microwave response rates and face challenges in achieving device-compatible ultrafast, sub-picosecond control. Here, we demonstrate an ultrafast field effect in atomically thin MoS₂ embedded within a hybrid 3D-2D terahertz nanoantenna. This nanoantenna transforms an incoming terahertz electric field into a vertical ultrafast gating field in

SUBMITTER: Hiraoka T 

PROVIDER: S-EPMC12141635 | biostudies-literature | 2025 Jun

REPOSITORIES: biostudies-literature