Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping.

ABSTRACT: Enhancing the drive current of oxide semiconductor transistors is crucial for enabling high-resolution displays with thin bezels and improving memory write and access speeds. High-mobility channel materials boost drive current but typically require stricter process control and reliability, presenting mass-production challenges compared to stable materials like InGaZnO. Therefore, increasing drive current without changing the channel material is a desirable goal to pursue. One approach is to enhance gate capacitance using high-κ gate dielectrics. In this study, we systematically investigate the impact of high-κ gate dielectrics on the performance of InGaZnO transistors, focusing on three different gate insulators: SiO2, HfO2, and ZrO2. Experimental results show that as the dielectric consta

SUBMITTER: Park J 

PROVIDER: S-EPMC12223046 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature