Rational impurity doping for enhanced hole mobility <i>in silicon</i> quantum dots for light-emitting diodes.

ABSTRACT: We report on the impact of impurity doping on the performance enhancement of silicon quantum dot (SiQD) light-emitting diodes. The increase in hole mobility resulting from boron doping increases the external quantum efficiency of electroluminescence by a factor of 12 and the optical power density by a factor of 2.65.

SUBMITTER: Yamada H 

PROVIDER: S-EPMC12235555 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature