Atomic layer deposition of nickel sulfide thin films and their thermal and electrochemical stability.

ABSTRACT: Nickel sulfides (NiS _x ) show promise for a range of energy and other applications, but their (in)stability under processing and operating conditions is scarcely studied. Herein, we have developed a new NiS _x atomic layer deposition process using an easily synthesized NiCl₂(TMPDA) precursor (TMPDA = N,N,N',N'-tetramethyl-1,3-propanediamine) with H₂S. Thin films deposited at 165-225 °C consist mostly of the β-NiS phase and display low resistivity (∼40-120 μΩ cm), high purity (<3 at% impurities), and a rough morphology. The thermal stability of the NiS _x thin films is studied using high-temperature X-ray diffraction, revealing that structural and compositional changes occur in reducing, in

SUBMITTER: Mattinen M 

PROVIDER: S-EPMC12243761 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature