Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices.

ABSTRACT: The integration of thermoelectric devices into mainstream microelectronic technological platforms could be a major breakthrough in various fields within the so-called Green-IT realm. In this article, the thermoelectric properties of heteroepitaxial SiGeSn alloys, an emergent CMOS-compatible material system, are evaluated to assess their possible application in thermoelectric devices. To this purpose, starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layers of about ∼1 to 2 W/m·K assessed by means of 3-ω measurements, the figure of merits are calculated through the use of Boltzmann transport equation, taking into account the relevant intervalley scattering processes, peculiar of this multivalley material system. Values for the figure of merit ZT

SUBMITTER: Graziosi P 

PROVIDER: S-EPMC12265006 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature