High-fidelity single-spin shuttling in silicon.

ABSTRACT: The computational power and fault tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. In a first set of experiments, we form static quantum dots and study how spin coherence decays during bucket-brigade shuttling, where we repeatedly mov

SUBMITTER: De Smet M 

PROVIDER: S-EPMC12267049 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature