Ultrahigh Dielectric Permittivity of a Micron-Sized Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase.
Ontology highlight
ABSTRACT: Innovative use of HfO2-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges, which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. During bipolar high electric-field cycling in numbers close to dielectric breakdown, the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors. Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the d
SUBMITTER: Di Zhang W
PROVIDER: S-EPMC12274175 | biostudies-literature | 2025 Jul
REPOSITORIES: biostudies-literature
ACCESS DATA
