Tunable Doping and Optoelectronic Modulation in Graphene-Covered 4H-SiC Surfaces.

ABSTRACT: Semiconducting graphene is pivotal for the advancement of nanoelectronics due to its unique electronic properties. In this context, silicon carbide (SiC) surfaces have been proposed as ideal supports for inducing semiconducting characteristics in graphene. Here, we employ many-body perturbation theory to investigate the electronic structure and optical properties of graphene-covered 4H-SiC surfaces. Our analysis reveals that pristine 4H-SiC surfaces with dangling bonds exhibit a reduced transport gap and enhanced optically active states within the visible spectrum compared to bulk 4H-SiC. Strong interfacial interactions resulting from the adsorption of a single graphene layer (GL) significantly alter graphene's dispersion, yielding a semiconducting interface with modified optoelectronic pr

SUBMITTER: Mansouri M 

PROVIDER: S-EPMC12282215 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature