Impact of interface roughness correlation on resonant tunnelling diode variation.

ABSTRACT: The Nano-Electronic Simulation Software (NESS) features an improved model of Interface Roughness (IR), accounting for correlation lengths in two perpendicular directions and allowing anisotropic roughness. IR in [Formula: see text] Resonant Tunnelling Diodes (RTDs) was investigated using both the previous and improved models, with 4 correlation lengths ([Formula: see text]) ranging from 2.5 nm to 10 nm. For each correlation length, 25 RTD device structures with IR were randomly generated. Device variation was quantified as the standard deviation of the resonant peak current ([Formula: see text]) and the corresponding bias voltage ([Formula: see text]), both extracted from the non-linear RTD current-voltage (IV) characteristics. The improved model resulted in greater variation, increasing s

SUBMITTER: Acharya P 

PROVIDER: S-EPMC12287518 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature