Enhancing Silicon Compound Heterojunction Solar Cells with Vanadium-Doped MoO_X as Hole Transport Layers.

ABSTRACT: Crystalline silicon (c-Si) solar cells dominate the global market, and the development of eco-friendly and cost-effective c-Si compound solar cells with carrier-selective passivated contacts has attracted increasing attention. This work investigated the impact of oxygen vacancies (V_O) and vanadium (V) doping on molybdenum trioxide (MoO_X), using a combination of first-principles calculations and device simulations. These V_O defects accumulated from bulk to surface with lower energy barrier of 1.7 eV, compared to 3.4 eV on surface and 3.8 eV from surface to bulk. The surface V_O significantly decreased MoO_X work function from 6.1 eV to 4.8 eV，considering alteration in surface charges from +4 µC cm^-2 to -8 µC cm^-2. Va

SUBMITTER: Cai H 

PROVIDER: S-EPMC12302542 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature