Advanced polynomial Y-function method for precise mobility characterization in 2D FETs.

ABSTRACT: Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS₂ FETs. This methodology enables a systematic discrimination among various scattering mechanisms while precisely extracting the threshold voltage. Through a comparative analysis of back-gate (BG) and top-gate (TG) MoS₂ FET configurations, we demonstrated the supe

SUBMITTER: Jang J 

PROVIDER: S-EPMC12313926 | biostudies-literature | 2025 Jul

REPOSITORIES: biostudies-literature