Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene.

ABSTRACT: Gating Bernal bilayer graphene breaks the inversion symmetry so that the stacking AB/BA boundaries within the gap reveal topologically protected states. In this study, we theoretically investigate arrays where the AB and BA domains are periodically patterned with experimentally identified defect lines. In the calculations we consider electron-electron interaction effects using density functional theory. Our findings reveal the existence of topological states within a gap induced by the patterning without an applied gate voltage. Furthermore, with an applied gate potential, the defect lines introduce spin-polarized states pinned within the gap and exhibit ferromagnetically coupled states. Importantly, we observe a hybridization of magnetic and topological states near the valleys that form c

SUBMITTER: Guerrero-Aviles R 

PROVIDER: S-EPMC12316863 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature