Extension Doping with Low-Resistance Contacts for P-Type Monolayer WSe₂ Field-Effect Transistors.

ABSTRACT: Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field-effect transistors (FETs) in complementary metal-oxide-semiconductor (CMOS) technology. 2D semiconductors, such as MoS₂ and WSe₂, are promising channel materials for beyond-silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low-resistance contacts for monolayer WSe₂ p-FETs. Self-limiting oxidation transforms a bilayer WSe₂ into a hetero-bilayer of a high-work-function WO_xSe_y on a monolayer WSe₂. Then, damage-free nanolithography defines an undoped n

SUBMITTER: Chen S 

PROVIDER: S-EPMC12327469 | biostudies-literature | 2025 Jun

REPOSITORIES: biostudies-literature