Ammonia Sensing via Pseudo Molecular Doping in UV-Activated Ambipolar Silicon Nanowire Transistors.

ABSTRACT: The potential of adsorbed gaseous molecules to create shallow electronic states for thermally excited charge carrier transport and to engineer silicon transistor properties has been largely overlooked compared to traditional substitutional impurities. This paper successfully modifies the electrical properties of ambipolar silicon junctionless nanowire transistors (Si-JNTs) using the reducing properties of ammonia (NH₃) for selective detection. Physisorption of NH₃ induces a dual response in both p- and n-type conduction channels of ambipolar Si-JNTs, significantly altering current and key parameters, including the "on" current (I_on), threshold voltage (V_th), and mobility (μ). NH₃ interaction increases conduc

SUBMITTER: Vardhan V 

PROVIDER: S-EPMC12332839 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature