Interfaces in Epitaxially Grown Zn₃P₂ Nanowires and Their Composition-Dependent Optoelectronic Properties for Photovoltaic Applications.

ABSTRACT: Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce crystallographic defect formation at interfaces to help enable new material combinations for photovoltaics. One material that stands to benefit from the nanowire morphology is zinc phosphide (Zn₃P₂), which, despite promising optoelectronic properties, has experienced limited applicability due to challenges achieving heteroepitaxy, stemming from its incompatible lattice parameter and coefficient of thermal expansion. Herein, we identify the requirements for successful epitaxy of Zn₃P₂ nanowires using metalorganic chemical vapor deposition and the impact on interface structure

SUBMITTER: Escobar Steinvall S 

PROVIDER: S-EPMC12355644 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature