Engineering Ni-Silicide Nanocontacts for 3D Silicon Devices via Geometrical Confinement Control.

ABSTRACT: Nanoscale Ni-silicide alloys are critical components for future generations of 3D electronic devices based on active Si nanostructures, with applications in nanoelectronics, energy conversion, and sensing. This study investigates how geometrical confinement in such nanostructures influences diffusion-driven silicidation, ultimately determining the alloy formation sequence, phase composition, and volumetric expansion. The silicidation of controlled Ni volumes is investigated on vertical silicon nanowires (NW) and nanosheets (NS) under various annealing conditions. The silicide phases and interface morphologies are characterized using high-resolution (scanning) transmission electron microscopy (HR-TEM, HR-STEM), energy-dispersive X-ray spectroscopy (EDX), and four-dimensional scanning transm

SUBMITTER: Muller J 

PROVIDER: S-EPMC12356115 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature