Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors.

ABSTRACT: Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric. The devices exhibit ambipolar characteristics with high, well-balanced on-state currents (~270 μA μm<

SUBMITTER: Rhee D 

PROVIDER: S-EPMC12357960 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature