Optical and temperature dependent electrical properties of Er-/Yb-doped ZnO schottky diodes and thin films.

ABSTRACT: The study reports the fabrication of undoped and Er-/Yb-doped ZnO thin films using the sol-gel spin coating technique. The structural and optical properties of the films were analyzed using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Electrical characteristics were studied through current-voltage (I-V) measurements using an HP 4140B pA meter/voltage source, capable of detecting currents as low as 10^-14 A. The XRD analysis confirmed that all films exhibited a hexagonal wurtzite structure, while the PL measurements at room temperature revealed a strong ultraviolet emission with a peak wavelength at 380 nm. The I-V measurements demonstrated good rectification behavior across all temperature ranges. Schottky diodes based on Er and Yb-doped ZnO thin films showed

SUBMITTER: Tolera D 

PROVIDER: S-EPMC12365009 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature