Oxygen Vacancy Dynamics in Different Switching Modes of Hf_0.5Zr_0.5O_2-δ.

ABSTRACT: HfO₂, one of the most common materials in resistive switching devices, can stabilize in a ferroelectric orthorhombic phase, enabling two nonvolatile polarization states via oxygen displacement in the unit cell. Under certain conditions, ferroelectric and resistive switching can coexist, independently addressable, within one device. This study employs operando spectroscopic analysis to elucidate the role of oxygen in both switching processes. A conductive filament is identified through a local valence change at the oxide surface via X-ray Photoelectron Emission Microscopy, allowing vacancy density and filament diameter evaluation. This provides well-founded experimental evidence of a conductive filament in orthorhombic Hf_0.5Zr_0.5O_2-δ (HZO)

SUBMITTER: Knabe J 

PROVIDER: S-EPMC12368994 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature