Natural Layered Phlogopite Dielectric for Ultrathin Two-Dimensional Optoelectronics.

ABSTRACT: The integration of high-dielectric-constant (high-κ) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here, we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-κ dielectric layer for transition metal dichalcogenide-based 2D electronics and optoelectronics. The wide band gap (∼4.8 eV), high dielectric constant (∼11), and large breakdown field (>10 MV cm^-1) of phlogopite enable transistors with subthreshold swings down to 100 mV dec^-1, minimal hysteresis (∼30-60 mV), and interface trap densities comparable to those of state-of-the-art oxide dielectrics. Moreover, phototransistors built upon monolayer molybdenum disulfi

SUBMITTER: Pucher T 

PROVIDER: S-EPMC12369019 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature