Quantum Geometric Engineering of Dual Hall Effects in 2D Antiferromagnetic Bilayers via Interlayer Magnetic Coupling.

ABSTRACT: The interplay between quantum geometry and magnetic order offers a novel strategy for designing next-generation nanodevices. Here, it is demonstrated that interlayer magnetic coupling in two-dimensional (2D) CoPSe₃ bilayers enables precise control over quantum geometric mechanisms, unlocking dual intrinsic Hall effects. The first-principles calculations reveal that the altermagnetic (AM) phase exhibits a giant anisotropic anomalous Hall effect (AHE) (σ_xy ≈46 S cm^-1) driven by Berry curvature localized at generic k-points, while the PT$\mathcal{P}\mathcal{T}$ -symmetric antiferromagnetic (AFM) phase hosts an intrinsic second-order nonlinear anomalous Hall effect (NAHE) (χ_xyy ≈ 160 µS V^-1) originating from quantum metric accumulation at

SUBMITTER: Sun Z 

PROVIDER: S-EPMC12376605 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature