Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness.

ABSTRACT: To satisfy the superior surface quality requirements in the fabrication of HBM (High-Bandwidth Memory) and 3D NAND Flash Memory, high-efficiency Si chemical mechanical planarization (CMP) is essential. In this study, a colloidal silica abrasive-based Si-wafer CMP slurry was developed to simultaneously achieve a high polishing rate (≥10 nm/min) and low surface roughness (≤0.2 nm) without inducing CMP-induced scratches. The proposed Si-wafer CMP slurry incorporates two functional components: triammonium phosphate (TAP) as a hydrolysis reaction accelerator and hydroxyethyl cellulose (HEC) as an abrasive drag force accelerator. The polishing rate enhancement mechanism of TAP was analyzed by monitoring the OH- mol concentration, surface adsorption behavior, and XPS spectra. The results showed t

SUBMITTER: Jeon MU 

PROVIDER: S-EPMC12388451 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature