High-Performance Flexible 2D Tellurium Semiconductor Grown by Isolated Plasma Soft Deposition for Wearable and Flexible Temperature Sensors.

ABSTRACT: High-quality flexible 2D tellurium (Te) semiconductors on a six-inch Si wafer and polyethylene terephthalate substrate using the isolated plasma soft deposition (IPSD) technique are successfully fabricated. Unlike conventional sputtering systems, the IPSD process minimizes direct plasma irradiation and plasma damage, thereby preserving the unique helical chain structure of the 2D Te layer. The integration of oxygen plasma treatment and in situ substrate heating significantly enhanced both the adhesion and crystallinity of the 2D Te layer. The optimized 2D Te layer exhibited exceptional properties, including a high carrier mobility of 103 cm² V^-1 s^-1, a smooth surface roughness of 0.778 nm, and a critical bending radius of 12 mm. When integrated into tempera

SUBMITTER: Choi TY 

PROVIDER: S-EPMC12391622 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature