Strain-Mediated Control of Domain Structures in 3R-MoS₂ Bilayers Synthesized by Vapor-Liquid-Solid Growth in Chemical Vapor Deposition.

ABSTRACT: Rhombohedrally stacked transition metal dichalcogenides (3R-TMDs) exhibit robust ferroelectricity enabled by in-plane interlayer sliding, positioning them as promising candidates for atomically thin nonvolatile memory devices. However, controlling the distribution of ferroelectric domains, which is governed by domain wall (DW) dynamics, remains a major challenge due to various imperfections that arise during the formation of stacked bilayer structures, by either CVD synthesis or manual stacking. These include substrate-induced instabilities, trapped bubbles, and spatially inhomogeneous strain, all of which hinder the realization of uniform domain structures. Here, we demonstrate domain structures in 3R-MoS₂ bilayers can be effectively engineered by tuning the CVD growth mode and

SUBMITTER: Hong SC 

PROVIDER: S-EPMC12392738 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature