Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization.

ABSTRACT: Trap states at the gate dielectric-organic semiconductor (OSC) interface are one of the main sources of extrinsic traps in organic field-effect transistors (OFETs). However, they are often overlooked and their effects on the charge transport are attributed to the exposure of devices to ambient air. Here a first variable-temperature transfer length method characterization of both p- and n-channel OFETs under full high vacuum conditions is reported. By comparing a hydroxylated aluminum oxide (Al₂O₃) gate dielectric with a hydroxyl-free, tetradecylphosphonic acid-functionalized Al₂O₃ dielectric, it is shown that hydroxyl-induced trap states reduce the charge carrier mobility in OFETs regardless of the channel type. This observation challenges the co

SUBMITTER: Radiev Y 

PROVIDER: S-EPMC12392864 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature