Design optimization of mutual dissolution layer and diffusion interface layer in planar heterojunction near-infrared organic phototransistors for ultrahigh photosensitivity.

ABSTRACT: The interfacial mutual solubility can result in a random distribution of donor and acceptor materials during the spin-coating step in the fabrication of planar heterojunction (PHJ) near-infrared (NIR) organic phototransistors. In this case, deep trap states are induced by acceptors, accelerating electron-hole recombination, ultimately impairing the photoresponsivity of the phototransistor. To solve this issue, a controllable mutual dissolution layer (formed by co-solvent treatment) combined with a diffusion interface layer (formed by the solvent vapor annealing (SVA) method) was introduced to achieve a more ordered arrangement of donors and acceptors, thereby enhancing the electrical performance of PHJ-based NIR phototransistors. Compared with a PDPP3T/PC₆₁BM CF device, a PDPP3T

SUBMITTER: Han T 

PROVIDER: S-EPMC12406118 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature