MoS₂ Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems.

ABSTRACT: Driven by the shift of artificial intelligence (AI) workloads to edge devices, there is a growing demand for nonvolatile memory solutions that offer high-density, low-power consumption, and reliability. However, well-established 3D NAND Flash using polycrystalline Si (Poly-Si) channel encounters bottlenecks in increasing bit density due to short-channel effects and cell-current limitations. This study investigates molybdenum disulfide (MoS₂) as an alternative channel material for 3D NAND Flash cells. MoS₂'s low bandgap facilitates hole-injection-based erase, achieving a broader memory window at moderate voltages. Furthermore, adopting a low-k (≈2.2) tunneling layer improves the gate-coupling ratio, reducing program/erase voltages and enhancing reliability, with endura

SUBMITTER: Kim KH 

PROVIDER: S-EPMC12407348 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature