High Performance P-Channel Transistor Based on Amorphous Tellurium Trioxide.

ABSTRACT: The development of high-performance p-channel transistors remains a critical challenge in complementary logic circuits, despite significant advances in n-channel transistor technologies. While amorphous oxide semiconductors have revolutionized n-type transistors, achieving comparable performance for p-type counterparts has proven elusive. Here, this study demonstrates a breakthrough in p-channel technology by transforming crystalline 2D tellurium (2D-Te) into amorphous tellurium trioxide (a-TeO₃) through UV ozone treatment. This structural transformation, directly observed via high-resolution transmission electron microscopy, induces dramatic changes in electronic properties, including significant bandgap widening and enhanced work function. The resulting a-TeO₃-based

SUBMITTER: Bang S 

PROVIDER: S-EPMC12411996 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature