Growth of High Aspect Ratio Wurtzite GaAs Nanowires.

ABSTRACT: Crystal phase control of III-V semiconductor nanowires grown by the vapor liquid solid mechanism has emerged as a new frontier in nanomaterials in the 2010s. Of particular interest is the ability to grow the metastable wurtzite crystal, which is commercially unavailable in semiconductors such as GaAs and SiGe. The successful growth of wurtzite GaAs nanowires has been demonstrated by precise control of the wetting contact angle of the catalyst particle. However, a recent discovery revealed an inherent limitation, known as the critical length, which restricts the maximum achievable aspect, length-to-diameter, ratio in wurtzite GaAs nanowire below 100. Here, we demonstrate the growth of wurtzite GaAs nanowire above the cirtical length with a stacking fault density of 10 SF/μm and precise crys

SUBMITTER: Jansen MM 

PROVIDER: S-EPMC12412090 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature