Reversible Magneto-Ionic Control of Exchange Bias in Coupled Spin-Valve-Like Heterostructures.

ABSTRACT: Voltage control of exchange bias (EB) is an important technological goal for low-power spintronic sensor and memory devices. The magneto-ionic (MI) approach for voltage-controlled EB is a promising strategy to achieve this goal, utilizing electrochemical reactions at low operational voltages. In typical MI devices, however, the sensitive EB layers are directly targeted by the electrochemical reactions, which often impairs reversibility. Here, we introduce an alternative device structure by isolating the EB layers from the active MI layer. Making use of the interlayer (IL) coupling through a spacer layer in an IrMn/Fe/Au/Fe spin-valve-like heterostructure, we show that EB can be reversibly controlled by an electrochemical modification of the top layer. Using the same device structure, we al

SUBMITTER: Goßler M 

PROVIDER: S-EPMC12412114 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature