Low-κ Extension Doping for High-Performance Carbon Nanotube Transistors: Toward High-Speed, Energy-Efficient Electronics.

ABSTRACT: Carbon nanotubes (CNTs) present considerable potential as next-generation logic switches owing to their ultra-thin structure and exceptional electrical properties. Although recent advancements have achieved impressive direct current (DC) performance in individual devices, research on the architectural design of CNT-based transistors remains limited. This gap is critical, as device architecture directly influences power consumption and switching speed at the circuit level. In particular, the balance between parasitic capacitance and resistance, key factors determining resistive-capacitive (RC) delay, has not been thoroughly addressed. In this study, top-gate CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) that employ a novel low-κ extension doping technique are presented. T

SUBMITTER: Chiu HY 

PROVIDER: S-EPMC12412536 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature