Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT).

ABSTRACT: This study provides a comprehensive analysis of the impact of the interfacial properties on the performance of organic thin-film transistors (OTFTs) with a hybrid dielectric of Al2O3/PVP compared to single-layer dielectrics of Al2O3 and PVP. The analyses were performed using the 2D Silvaco Atlas numerical simulator, which conducted a detailed numerical investigation into how varying the thickness ratio of Al2O3 and PVP in the dielectric affects contact resistance and off-state current in short-channel OTFTs. High-K dielectric materials, such as Al2O3, offer low threshold voltages but lead to increased contact resistance and leakage current, while low-K dielectrics like PVP reduce leakage current but suffer from lower mobility and higher contact resistance. By utilizing a hybrid Al2O3/PVP d

SUBMITTER: Prasanthi L 

PROVIDER: S-EPMC12425321 | biostudies-literature | 2025

REPOSITORIES: biostudies-literature