Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility.

ABSTRACT: Graphene was directly grown on SiO₂/Si substrates using microwave plasma-enhanced chemical vapor deposition (PECVD) to investigate how synthesis-driven variations in structure and doping influence carrier transport. The effects of synthesis temperature, plasma power, deposition time, gas flow, and pressure on graphene's structure and electronic properties were systematically studied. Raman spectroscopy revealed non-monotonic changes in layer number, defect density, and doping levels, reflecting the complex interplay between growth, etching, and self-doping mechanisms. The surface morphology and conductivity were assessed by atomic force microscopy (AFM). Charge carrier mobility, extracted from graphene-based field-effect transistors, showed strong correlations with Raman feature

SUBMITTER: Meskinis S 

PROVIDER: S-EPMC12429864 | biostudies-literature | 2025 Aug

REPOSITORIES: biostudies-literature