Resistive Switching Behavior of Sol-Gel-Processed ZnMgO/ZnO Bilayer in Optoelectronic Devices.

ABSTRACT: Sol-gel-processed zinc oxide (ZnO) and magnesium-doped zinc oxide (ZnMgO) are widely used in quantum dot light-emitting diodes (QLEDs) due to their excellent charge transport properties, ease of fabrication, and tunable film characteristics. In particular, the ZnMgO/ZnO bilayer structure has attracted considerable attention for its dual functionality: defect passivation by ZnMgO and efficient charge transport by ZnO. However, while the effects of resistive switching (RS) in individual ZnO and ZnMgO layers on the aging behavior of QLEDs have been studied, the RS characteristics of sol-gel-processed ZnMgO/ZnO bilayers remain largely unexplored. In this study, we systematically analyzed RS properties of an indium tin oxide (ITO)/ZnMgO/ZnO/aluminum (Al) device, demonstrating superior performan

SUBMITTER: Shin HS 

PROVIDER: S-EPMC12430625 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature