Neuromorphic Photoresponse in Ultrathin SnS₂-Based Field Effect Transistor.

ABSTRACT: As artificial intelligence continues to evolve, neuromorphic technologies, which emulate biological neural networks, are increasingly seen as a promising direction. Two-dimensional materials are considered promising for neuromorphic applications due to their tunable electrical and optoelectronic properties. In this work, a back-gated tin disulfide (SnS₂) field-effect transistor (FET) is electrically and optoelectronically characterized at different temperatures (80, 295, and 380 K), pressures (ambient and 10^-4 mbar), and illumination conditions (dark and laser light from 420 to 800 nm). Responsivity peaks of up to ∼100 A/W are recorded. Persistent photoconductivity is observed, with current retention after illumination ranging from 0% to ∼30% of the initial dark curre

SUBMITTER: De Stefano S 

PROVIDER: S-EPMC12442007 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature