Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs.

ABSTRACT: 2D semiconductor devices undergo significant degradation upon exposure to ambient molecules and contaminants, necessitating effective passivation techniques for protecting both the contact and channel. In this study, ultrathin amorphous gallium oxide (GaO_X) layers are squeeze-printed from liquid gallium and integrated with 2D tungsten disulfide (WS₂) channels, as both surface passivation layers with conductive filament (CF) contacts and alternative gate dielectrics, for WS₂/GaO_X field-effect transistors. The ultrathin GaO_X bilayer gate dielectric exhibits a high critical electric field (≈7.9 MV cm^-1) and moderate dielectric constant (3.1). Electrical contacts to the GaO_X-passivated channel are established through

SUBMITTER: Moon S 

PROVIDER: S-EPMC12444828 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature