Intrinsic Ferroelectric Polarization in Doped HfO₂ and ZrO₂.

ABSTRACT: Fluorite ferroelectrics based on HfO₂ and ZrO₂ hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition. The measured values can include distinct contributions, and indeed, HfO₂ and ZrO₂ present prominent ionic transport, in addition to electronic processes. This can cause the genuine ferroelectricity of fluorites to be superimposed on extrinsic contributions, leading to the erroneous estimation of polarization. This possibility has a major impact, as it can seriously affect the system's understanding, hampering progress. To disclose genuine ferroelectricity, a com

SUBMITTER: Lyu X 

PROVIDER: S-EPMC12462559 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature