Structural, optical and electrical properties of Si-rich and N-rich PECVD silicon nitride films.

ABSTRACT: Silicon nitride (SiN_x) thin films play a crucial role in the semiconductor industry due to their controllable properties, which make them suitable for various applications. In this study, SiN_x films, with varying composition ratios (x=[N]/[Si]), were fabricated under different conditions using plasma-enhanced chemical vapor deposition (PECVD). The composition significantly affects the structural, optical and electrical properties of the films. We investigate the characteristics that depend on the stoichiometric composition of amorphous hydrogenated SiN_x films (ranging from N-rich to Si-rich) through techniques such as X-ray photoelectron spectroscopy (XPS), electron microprobe microscopy (EMP), ellipsometry, Fourier transform infrared spectroscopy (FTIR), s

SUBMITTER: Moussi TA 

PROVIDER: S-EPMC12480472 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature