Polarity control of 2D semiconductor for reconfigurable electronics.

ABSTRACT: The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO_x/WSe₂/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electri

SUBMITTER: He X 

PROVIDER: S-EPMC12480568 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature